A multi-institutional team led by researchers from the Indian Institute of Technology (IIT)- Jodhpur has fabricated a memory device for electronic gadgets that promises to provide high-density data storage.
The currently available technologies such as hard disk drives (HDD), USB flash drives, SD cards, Solid State Drives (SDD), Dynamical Random-Access Memory (DRAM), and Static Random-Access Memory (SRAM) have limited data storage capacity. They cannot handle the vast quantum of data generated by digital globalization and the internet of things (IoTs). Memory devices need to be miniaturized to store the massive data in a small device. But, the currently available silicon-based memory technologies face serious reliability issues upon downscaling.
A multi-institutional team led by researchers from the Indian Institute of Technology (IIT)- Jodhpur has fabricated a memory device for electronic gadgets that promises to provide high-density data storage.
The new device promises to overcome the problem. It is based on Resistive Random-Access Memory (RRAM) technology, which has shown great promise for the next-generation computing memory storage technology. “The RRAM technology, based on change in electrical resistance regulated by the electrical impulse, has become very popular because it has several advantages such as high stacking density and scalability, low power consumption, multilevel storage capability, fast switching speed, and simple Metal−Insulator−Metal (MIM) device structure”, the scientists said in their research paper published in the science journal ACS Applied Nanomaterial.
The device has been fabricated using Cadmium selenide (CdSe) quantum dots. The study was funded by the Science and Engineering Research Board (SERB) in the Ministry of Science and Technology, and the Ministry of Human Resource Development (MHRD).
The team consisted of Dr. Satyajit Sahu, Associate Professor of the Department of Physics at IIT-Jodhpur, Jayanta Bera, and Atanu Betal, Ph.D. students in his Department; Dr. Ashish Sharma, Senior Research Fellow, and Dr. Arup Kumar Rath, Senior Scientist, CSIR-National Chemical Laboratory (NCL), Pune; and Dr. Uday Shankar, a Ph.D. student at IIT Roorkee.
A press release from IIT-Jodhpur noted that the researchers are also investigating the human brain-inspired neuromorphic computing in quantum dots-based resistive memory devices which will have huge potential to be used in the field of artificial synapse.
India Science Wire
ISW/SP/IIT-JODHPUR/STORAGEDEVICE/14/07/2022
